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| (R) BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 A2 K A1 isolated TOP3I (Plastic) BYW99PI-200 DESCRIPTION A2 A2 K A1 Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOT93, TOP3I or TO247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. A1 K SOT93 (Plastic) BYW99P-200 TO247 (Plastic) BYW99W-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current SOT93 / TO247 = 0.5 TOP3I Surge non repetitive forward current Storage and junction temperature range Tc=120C Tc=115C tp=10ms sinusoidal Parameter Per diode Per diode Per diode Per diode Value 35 15 15 200 - 40 to + 150 - 40 to + 150 Value 200 Unit A A IFSM Tstg Tj Symbol VRRM A C C Unit V Parameter Repetitive peak reverse voltage August 1998 Ed : 2A 1/6 BYW99P/PI/W THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter SOT93 / TO247 Per diode Total TOP3I Per diode Total Value 1.8 1.0 2.0 1.25 0.2 0.5 Unit C/W Rth (c) Coupling SOT93 / TO247 TOP3I C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2 % Test Conditions VR = VRRM Min. Typ. Max. 20 1.5 Unit A mA V IF = 12 A IF = 25 A IF = 25 A 0.85 1.05 1.15 To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.016 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 25 Unit ns dIF/dt = -50A/s 40 tr = 10 ns 15 ns VFP 2/6 Tj = 25C tr = 10 ns 2 V BYW99P/PI/W Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.2 =0.05 =0.1 =0.5 =1 Fig.2 : Peak current versus form factor. 20 17.5 15 12.5 10 7.5 5 2.5 350 300 250 200 T IM(A) T IM =tp/T tp 150 100 P=10W P=20W P=30W I F(av)(A) 50 =tp/T tp 0 0 2.5 5 7.5 10 12.5 15 17.5 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) = 0.5 =0.2 =0.1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj=125 oC 0.5 T 0.2 Single pulse 0.1 1 10 100 200 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. (SOT93, TO247) 160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001 IM(A) Fig.6 : Non repetitive surge peak forward current versus overload duration. (TOP3I) 160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001 IM(A) Tc=25 oC Tc=75 o C Tc=120 o C t =0.5 Tc=25 oC Tc=60 o C t =0.5 t(s) 0.01 0.1 1 t(s) 0.01 0.1 Tc=115 o C 1 3/6 BYW99P/PI/W Fig.7 : Average current temperature. ( = 0.5) (SOT93, TO247) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF(av) (A) Rth(j-a)=Rth(j-c) versus ambient Fig.8 : Average temperature. ( = 0.5) (TOP3I) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) current versus ambient Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W =0.5 T Rth(j-a)=15 o C/W =0.5 T =tp/T tp Tamb( o C) =tp/T tp Tamb(o C) 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). Fig.10 : Recovery charges versus dIF/dt. 200 190 180 170 160 150 140 130 120 11 0 C(pF) F=1Mhz Tj=25 oC VR(V) 10 1 00 200 100 1 60 55 90%CONFIDENCE 50 IF=IF(av) 45 40 35 30 25 20 15 10 5 0 1 QRR(nC) Tj=100 OC Tj=25 O C dIF/dt(A/us) 10 1 00 Fig.11 : Peak reverse current versus dIF/dt. Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 4/6 IRM(A) 90%CONFIDENCE 1.50 Tj=100 OC IF=IF(av) 1.25 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 1 00 0.00 0 25 dIF/dt(A/us) 20 10 Tj( oC) 50 75 100 125 150 BYW99P/PI/W PACKAGE MECHANICAL DATA SOT93 DIMENSIONS REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA TOP3I (isolated) DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.4 4.6 0.173 0.181 1.45 1.55 0.057 0.061 14.35 15.60 0.565 0.614 0.5 0.7 0.020 0.028 2.7 2.9 0.106 0.114 15.8 16.5 0.622 0.650 20.4 21.1 0.815 0.831 15.1 15.5 0.594 0.610 5.4 5.65 0.213 0.222 3.4 3.65 0.134 0.144 4.08 4.17 0.161 0.164 1.20 1.40 0.047 0.055 4.60 0.181 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.70 4.90 1.185 0.193 1.90 2.10 0.075 0.083 2.50 0.098 2.00 0.078 0.50 0.78 0.020 0.031 1.10 1.30 0.043 0.051 1.75 0.069 2.10 0.083 10.80 11.10 0.425 0.437 14.70 15.20 0.279 0.598 12.20 0.480 16.20 0.638 18.0 0.709 3.95 4.15 0.156 0.163 31.00 1.220 4.00 4.10 0.157 0.161 REF. A B C D E F G H J K L P R Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/6 BYW99P/PI/W PACKAGE MECHANICAL DATA TO247 V REF. V Dia. DIMENSIONS Millimeters Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. Max. Min. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139 Marking : Type number Cooling method : C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Informationfurnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 |
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